| Title: |
Improvement of the thermal design in the SiC PVT growth process |
| First author: |
Yan JunYi;Chen Qisheng;Jiang YanNi;Zhang H |
| Abstract: |
The physical vapor transport (PVT) method is used to grow silicon carbide (SiC) crystals, which are difficult to be grown by other methods. In this paper, a field-coordination theory is involved to optimize the SiC PVT growth process. By using a finite volume-based computational method, we calculate the flow field as well as species concentration field before and after improvement of the thermal design, respectively. The shape of the SiC crystal grown using the improved thermal design is also shown.
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| Contact the author: |
Chen Qisheng |
| Page number: |
34-37 |
| Issue: |
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| Subject: |
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| Authors units: |
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| PubYear: |
2014 |
| Volume: |
385 |
| Unit code: |
115111 |
| Publication name: |
JOURNAL OF CRYSTAL GROWTH |
| The full text link: |
http://dx.doi.org/10.1016/j.jcrysgro.2013.02.031 |
| Full papers: |
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| Departmens of first author: |
NML |
| Paper source: |
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| Paper type: |
AK |
| Participation of the author: |
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| ISSN: |
0022-0248 |
