Chen Qisheng>----Institute of Mechanics ,Chinese Academy of Sciences

Name:	Chen Qisheng	Education:	Ph.D.
Positions:		Academic title:	Prof.
Phone:	(010) 82544092	Fax:	(010) 82544096
E-mail:	qschen@imech.ac.cn	Personal Website:
Postal Code:	100190	Mailing Address:	15 Bei Si Huan Xi Rd, Beijing 100190, China

Resume:

Direction:

Computational Fluid Mechanics, Computational Aeroacoustics, Crystal Growth Process Modeling

Community service:

Achievements:

Article:

1. Qisheng Chen, Yanni Jiang, Junyi Yan, Ming Qin, Progress in modeling of fluid flows in crystal growth processes, Progress in Natural Science 18 (12): 1465-1473, 2008.

2. Qi-Sheng Chen and Ya-Chao Liu, Hydrothermal Instability of Thermocapillary Convection in a Large-Prandtl-Number Liquid Bridge under Microgravity, Advances in Space Research, 41: 2126-2130, 2008.

3. Qisheng Chen, Guyu Deng, A. Ebadian, V. Prasad, Numerical study on flow field and temperature distribution in growth process of 200 mm Czochralski silicon crystals, Journal of Rare Earths 25 S2, pp. 345-348, 2007.

4. Q.-S. Chen, J.-Y. Yan, V. Prasad, Application of flow-kinetics model to the PVT growth of SiC crystals, J. of Crystal Growth 303, pp. 357-361, 2007.

5. Jing Lu, Zi-Bing Zhang and Qi-Sheng Chen, Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals, J. of Crystal Growth 292, pp. 519-522, 2006.

6. Qi-Sheng Chen, Jing Lu, Zi-Bing Zhang, Guo-Dan Wei and Vish Prasad, Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization, J. of Crystal Growth 292, pp. 197-200, 2006.

7. Z.B. Zhang, J. Lu, Q.S. Chen, V. Prasad, Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method, Acta Mechanica Sinica 22 (1): 40-45 FEB 2006.

8. Q.-S. Chen, S. Pendurti and V. Prasad, Modeling of Ammonothermal Growth of Gallium Nitride Single Crystals, J. of Materials Science 41, pp. 1409-1414, 2006.

9. Q.-S. Chen, P. Gao and W.R. Hu, Effects of Induction Heating on Temperature Distribution and Growth Rate in Large-Size SiC Growth System, J. of Crystal Growth 266/1-3, pp. 320-326, 2004.

10. Q.-S. Chen, S. Pendurti and V. Prasad, Effects of Baffle Design on Fluid Flow and Heat Transfer in Ammonothermal Growth System of Nitrides, J. of Crystal Growth 266/1-3, pp. 271-277, 2004.

11. Q.-S. Chen, J. Wegrzyn and V. Prasad, Analysis of temperature and pressure changes in liquefied natural gas (LNG) cryogenic tanks, Cryogenics 44 (10), pp. 701-709, 2004.

12. Q.-S. Chen, V. Prasad and W.R. Hu, Modeling of Ammonothermal Growth of Nitrides, J. of Crystal Growth 258/1-2, pp.181-187, 2003.

13. Q.-S. Chen, H. Zhang and V. Prasad , Heat Transfer and Kinetics of Bulk Growth of Silicon Carbide, J. of Crystal Growth 230/1-2, pp. 239-246, 2001.

14. Q.-S. Chen, H. Zhang, R.-H. Ma, V. Prasad, C.M. Balkas and N.K. Yushin, Modeling of transport processes and kinetics of silicon carbide bulk growth, J. of Crystal Growth 225/2-4, pp. 299-306, 2001.

15. Q.-S. Chen, H. Zhang, V. Prasad, C.M. Balkas, N.K. Yushin and S. Wang, Kinetics and modeling of sublimation growth of silicon carbide bulk crystal, J. of Crystal Growth 224/1-2, pp. 101-110, 2001.

16. Q.-S. Chen, H. Zhang, V. Prasad, C.M. Balkas and N.K. Yushin, Modeling of heat transfer and kinetics of physical vapor transport growth of silicon carbide crystals, J. of Heat Transfer –Transactions of ASME 123, pp. 1098-1109, 2001.

17. Q.S. Chen, V. Prasad, A. Chatterjee and J. Larkin, A porous media-based transport model for hydrothermal growth, J. of Crystal Growth 198/199, pp. 710-715, 1999.

18. Q.-S. Chen, V. Prasad and A. Chatterjee, Modeling of fluid flow and heat transfer in a hydrothermal crystal growth system: use of fluid-superposed porous layer theory, J. of Heat Transfer –Transactions of ASME 121, pp. 1049-1058, 1999.

19. Q.-S. Chen, W.-R. Hu, and V. Prasad, Effect of liquid bridge volume on the instability in small-Prandtl-number half zones, J. Crystal Growth 203, pp. 261-268, 1999.

20. Q.S. Chen and W.R. Hu, Instability from steady and axisymmetric to steady and asymmetric floating half zone convection in a fat liquid bridge of larger Prandtl number, Chinese Physics Letters 16, pp. 822-823, 1999.

21. Q.S. Chen and W.R. Hu, Influence of liquid bridge volume on instability of floating half-zone convection, International J. Heat Mass Transfer 41, pp. 825-837, 1998.

22. Q.S. Chen and W.R. Hu, Numerical investigation on a simulation model of floating zone convection, Int. J. Heat Mass Transfer 40, pp. 757-763, 1997.